The layout design has been specifically design for uplink W-CDMA Node B system. The simulated RF performance in the W-CDMA uplink frequencies shows 1.2 ± 0.1 dB of noise figure with small-signal gain of more than 30 dB. The input and return loss are better than 10 dB. The low noise amplifier circuit...

GaAs pHEMT technology gives better performance than SiGe BJT for base station application. The PAD is made up of only two OMMIC 0.2 um pHEMT. It was designed using ADS2003C software. The fabrication was done by CMP in France. CMP supports OMMIC ED02AH Design Foundry. The MMIC PAD gives superior retu...

A three-stage MMIC low noise amplifier has been designed to operate at frequency range of 36GHz to 42GHz. Each stage of the amplifier circuit is passively biased using bipolar power supply.

Consists of 3 main products – A Monolithic Microwave Integrated Circuit (MMIC) Power Amplifier (PA) designed for operation over a frequency band of 24-32 GHz, A Monolithic Integrated Power Amplifier Driver (PAD) band of 24-32 GHz and a low noise amplifier designed for operation over a frequency band...

Consists of 4 main products- A low noise amplifier, GaAs MMIC Feedback Amplifier, a Monolithic Microwave Integrated Circuit (MMIC) and Voltage Controlled Oscillator (VCO) for X-band.

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