Facilities > RF Test & Applications

RF & MICROWAVE MEASUREMENT SYSTEM FROM DC – 40 GHz

Type

- Hardware

Description

The RF & Microwave measurement system provides capability of semiconductor RF characterization for small-signal analysis, large signal-analysis, spectrum, noise and power analysis. All these analyses process can be done accurately with the RFOW method using high frequency probe-station which can support higher frequency.

System Features

The whole RF and Microwave system consists of Probe-station, Network Analyzer, Spectrum Analyzer and RF Signal Generator which can do measurement and analysis up to 40 GHz. The Noise Figure Analyzer also can do such noise analyses up to 26 GHz frequency. For the RF power measurement, the system also provides Power Meter which can measure low and high power level up to 30dBm (1 Watt). All the measurement can support the measurement on wafer, module and sub-module system.

System Capability

Highly shielded environment system up to 220 GHz frequency range measurement. Network parameter (S-Parameter) measurement up to 40 GHz Spectral and Phase Noise Analysis up to 40 GHz. Noise Figure measurement up to 26 GHz. Input /Output Power measurement up to 30dBm at 50GHz. Power compression (P1dB) and Third Harmonic (IP3) measurement for active device.

Sample Information

Sample: Board level, sub-module, chip, wafer and die Size (wafer): 0.5cm to 15.0cm RF Probe tip (On-wafer): GSG configuration (up to 50 GHz); Pitch: 50 um, 100um, 150 um, 200 um and 450um.

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